Semiconductor integrated circuit device and exposure method

ABSTRACT

In a semiconductor integrated circuit device including a plurality of semiconductor devices formed on a substrate, the principal plane of the substrate is partitioned into a plurality of device regions and into a plurality of routing regions each crossing a boundary between the plural device regions. A device group including one or more semiconductor devices among the plural semiconductor devices and a local interconnect for connecting the semiconductor devices included in the device group are disposed within the plural device regions. A global routing for connecting the device groups to each other is disposed within each of the plural routing regions.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a semiconductor integratedcircuit device including a plurality of semiconductor devices formed ona substrate and an exposure method employed for fabricating the same.

[0002] In fabrication of semiconductor integrated circuit devices, areduction projection aligner employed in a step and repeat drawingmethod (hereinafter referred to as an optical stepper) is widely used.

[0003] Semiconductor integrated circuit technology has been recentlyremarkably developed, and there has been a tendency for the minimumdesign rule to be reduced by approximately 70% and the chip area to besubstantially doubled approximately every three years. In order to copewith the reduction and the increase of the chip area, an optical stepperhas been variously developed not only to have larger numerical aperture(NA) and use exposing light of a shorter wavelength for improvingresolution but also to have a larger area of an exposure region (field).In the newest optical stepper, one field has the maximum area ofapproximately 22 mm□ on a material to be exposed.

[0004] Furthermore, in fabrication of a semiconductor integrated circuitdevice having a dimension larger than one field of an optical stepper,for example, the following method has been employed (as is disclosed inJapanese Laid-Open Patent Publication No. 63-258042): The principalplane of a rectangular (herein including square) substrate to be formedinto a semiconductor chip is partitioned into a plurality of smallrectangular regions, each of which is dealt with as one field forexposure. A pattern of a functional block is formed within each smallregion and functional blocks of the respective small regions areconnected to one another through interconnects crossing boundariesbetween the small rectangular regions. In this method, an interconnectfor connecting the functional blocks (hereinafter referred to as aglobal routing) is formed by stitching the patterns transferred in thesmall rectangular regions in the exposure. Therefore, a global routingis generally formed in an interconnect layer having such a large widththat a stitching error caused in stitching the patterns is negligible.

[0005]FIG. 5 is an enlarged plane view of a part of a conventionalsemiconductor integrated circuit device fabricated by the aforementionedmethod.

[0006] As is shown in FIG. 5, the principal plane of a substrate 80 ispartitioned into a plurality of two-dimensionally arranged rectangularregions 81 (surrounded with broken lines). In using an optical stepper,each rectangular region 81 is dealt with as one field for exposure.

[0007] Furthermore, as is shown in FIG. 5, a first device group 82 a, asecond device group 82 b, a third device group 82 c and a fourth devicegroup 82 d each having fine patterns are respectively disposed inadjacent four rectangular regions 81, specifically, in a firstrectangular region 81 a, a second rectangular region 81 b, a thirdrectangular region 81 c and a fourth rectangular region 81 d. Each ofthe device groups 82 a through 82 d includes at least one semiconductordevice formed on the substrate. Also, each of interconnects 83 forconnecting the device groups 82 a through 82 d to one another isdisposed so as to cross a boundary between the rectangular regions 81,namely, a field boundary indicated with the broken line.

[0008] Specifically, each interconnect 83 is formed by mutuallystitching the patterns transferred in the rectangular regions 81 in theexposure, and hence, a stitching error can be caused in a portionpositioned on the field boundary in the interconnect 83. Therefore, aninterconnect layer for each interconnect 83 should be formed as apattern layer having a comparatively large design rule so as not tocause disconnection or short-circuit derived from the stitching error.

[0009] On the other hand, in accordance with recent rapid development inshrink of devices, an electron beam stepper using electron beam as anexposing energy source (electron projection lithography; hereinafterreferred to as EPL), attaining higher resolution than an opticalstepper, has been studied and developed.

[0010] In an electron lens used in the EPL, aberration is abruptlyincreased as the orbit of electrons is farther from the optical axis.Therefore, it is difficult for the electron lens to have a large field(of 20 mm□ or more) as that of an optical lens. Accordingly, thefollowing method is to be employed in the EPL: The principal plane of asubstrate to be exposed is partitioned into small regions (hereinafterreferred to as sub-fields) each with an area of approximately 250 μm□ soas to transfer a pattern in each of the sub-fields. The patterns formedin the respective sub-fields are stitched to one another so as to formthe pattern of the entire semiconductor chip.

[0011] The increase of the NA and the field of an optical stepper leadsto increase of a lens diameter of an imaging optical system. As aresult, the lens diameter has already increased to the limit ofindustrial fabrication. Therefore, it is difficult to further increaseboth the NA and the field. In addition, since a mask pattern has beenalso reduced in accordance with the reduction of a device, it is alsodifficult to keep dimensional accuracy in a mask pattern.

[0012] Accordingly, in an optical stepper, the reduction ratio isexamined to be decreased to ×1/6 through ×1/10 from the currentreduction ratio of ×1/4 through ×1/5. On the contrary, when thereduction ratio is decreased, it is difficult to form a circuit patternof an entire semiconductor chip in one mask. Therefore, also inemploying an optical stepper, some exposure method is being developed inorder to form a pattern of an entire semiconductor chip with theprincipal plane of a substrate with the semiconductor chip partitionedinto several fields in each of which a pattern is transferred.

[0013] When patterns transferred in respective fields or sub-fields arestitched to one another by using an optical stepper or EPL, however, astitching error is caused in a stitched portion between the patterns asdescribed above. For example, when the EPL is used, each sub-field withan area of approximately 250 μm□ has a stitched portion and a stitchingerror is caused in each stitched portion.

[0014]FIGS. 6A through 6C are diagrams of exemplified stitching errorscaused in stitched portions between patterns in a conventionalsemiconductor integrated circuit device. In FIGS. 6A through 6C,reference numerals 91 a and 91 b (each surrounded with a broken line)denote adjacent exposure regions (each corresponding to one field in anoptical stepper or one sub-field in the EPL), a reference numeral 92denotes a pattern formed by stitching patterns respectively transferredin the exposure regions 91 a and 91 b, and a reference numeral 93denotes a stitched portion of the pattern 92.

[0015] When the exposure regions 91 a and 91 b are away from each otheras is shown in FIG. 6A, the stitched portion 93 of the pattern 92 islocally narrowed.

[0016] When the exposure regions 91 a and 91 b partially overlap eachother as is shown in FIG. 6B, the stitched portion 93 of the pattern 92is locally widen.

[0017] Alternatively, when the exposure regions 91 a and 91 b areshifted from each other as is shown in FIG. 6C, the stitched portion 93of the pattern 92 is bent.

[0018] In an actual semiconductor integrated circuit device, the localdimensional variation of the pattern as is shown in FIGS. 6A and 6B andthe bend of the pattern as is shown in FIG. 6C are mixed so as to causestitching errors, resulting in degrading the performance and thereliability of the device. For example, when a stitching error is causedin a gate electrode formed on an active region, there arises a problemof variation in the threshold voltage and the like. Alternatively, whena stitching error is caused in an interconnect layer, stress migrationor electromigration is caused, resulting in largely degrading thereliability of the device.

[0019] On the other hand, when the aforementioned method disclosed inJapanese Laid-Open Patent Publication No. 63-258042 is applied to theEPL using sub-fields each having the maximum area of approximately 250μm□, it is necessary to interconnect functional blocks to one another byusing merely pattern layers having such a comparatively large designrule that a stitching error is negligible. Therefore, freedom in themask pattern layout design for an integrated circuit is largelyrestricted.

SUMMARY OF THE INVENTION

[0020] In consideration of the aforementioned conventional problems, anobject of the invention is forming a circuit pattern larger than onefield of an optical stepper or one sub-field of EPL without a stitchingerror.

[0021] In order to achieve the object, the first semiconductorintegrated circuit device of this invention comprises a plurality ofsemiconductor devices formed on a substrate, and a principal plane ofthe substrate is partitioned into a plurality of device regions and intoa plurality of routing regions each crossing a boundary between theplurality of device regions, a device group including one or moresemiconductor devices among the plurality of semiconductor devices and alocal interconnect for connecting the semiconductor devices included inthe device group are disposed within the plurality of device regions,and a global routing for connecting the device groups to each other isdisposed within the plurality of routing regions.

[0022] In the first semiconductor integrated circuit device, a devicegroup including one or more semiconductor devices and a localinterconnect for connecting the semiconductor devices included in thedevice group are disposed within the device regions partitioning theprincipal plane of the substrate. Therefore, when the dimension of thedevice regions is set to be equal to or smaller than one field of anoptical stepper or one sub-field of EPL, the device group and the localinterconnect can be formed within the device regions without a stitchingerror. As a result, variation or degradation of the devicecharacteristic derived from a stitching error can be prevented. Also,disconnection or the like of the local interconnect caused byelectromigration or stress migration derived from a stitching error canbe avoided. Accordingly, the performance and the reliability of thesemiconductor integrated circuit device can be prevented from degrading.

[0023] Furthermore, in the first semiconductor integrated circuitdevice, a global routing for connecting the device groups is disposedwithin the routing regions partitioning the principal plane of thesubstrate and crossing boundaries between the device regions. Therefore,when the dimension of routing regions is set to be equal to or smallerthan one field of an optical stepper or one sub-field of EPL, a globalrouting crossing a boundary between the device regions, for example aglobal routing for connecting the device groups disposed within anadjacent pair of device regions to each other, can be formed without astitching error. Accordingly, the device groups, namely, the functionalblocks, can be connected to one another over a large area withoutdegrading the reliability of the global routings. As a result, thesemiconductor integrated circuit device can attain a large chip area.

[0024] In addition, in the first semiconductor integrated circuitdevice, the dimensions of the device regions and the routing regions arevariable, and hence, freedom in mask pattern layout design for theintegrated circuit can be improved.

[0025] The second semiconductor integrated circuit device of thisinvention comprises a plurality of semiconductor devices formed on asubstrate, and a principal plane of the substrate is partitioned into aplurality of device regions having one shape and two-dimensionallyarranged in a repetitive cycle corresponding to the shape and into aplurality of routing regions having the shape and two-dimensionallyarranged in the repetitive cycle corresponding to the shape to beshifted from the plurality of device regions by a distance, a devicegroup including one or more semiconductor devices among the plurality ofsemiconductor devices and a local interconnect for connecting thesemiconductor devices included in the device group are disposed withinthe plurality of device regions, and a global routing for connecting thedevice groups to each other is disposed within the plurality of routingregions.

[0026] In the second semiconductor integrated circuit device, a devicegroup including one or more semiconductor devices and a localinterconnect for connecting the semiconductor devices included in thedevice group are disposed within the device regions partitioning theprincipal plane of the substrate. Therefore, when the dimension of thedevice regions is set to be equal to or smaller than one field of anoptical stepper or one sub-field of EPL, the device group and the localinterconnect can be formed within the device regions without a stitchingerror. As a result, variation or degradation of the devicecharacteristic derived from a stitching error can be prevented. Also,disconnection or the like of the local interconnect caused byelectromigration or stress migration derived from a stitching error canbe avoided. Accordingly, the performance and the reliability of thesemiconductor integrated circuit device can be prevented from degrading.

[0027] Furthermore, in the second semiconductor integrated circuitdevice, a global routing for connecting the device groups to each otheris disposed within the routing regions partitioning the principal planeof the substrate and arranged in the same repetitive cycle as that ofthe device regions to be shifted from the device regions by apredetermined distance. Therefore, when the dimension of the routingregions is set to be equal to or smaller than one field of an opticalstepper or one sub-field of EPL, a global routing crossing a boundarybetween the device regions, for example, a global routing for connectingthe device groups disposed within adjacent pair of device regions toeach other, can be formed without a stitching error. Accordingly, thedevice groups, namely, the functional blocks, can be connected to oneanother over a large area without degrading the reliability of theglobal routings. As a result, the semiconductor integrated circuitdevice can attain a large chip area.

[0028] In addition, in the second semiconductor integrated circuitdevice, the device regions and the routing regions are in apredetermined shape and two-dimensionally arranged in the repetitivecycle corresponding to the shape. Therefore, each of the device regionsand the routing regions can be easily dealt with as one field of anoptical stepper or one sub-field of EPL for the exposure.

[0029] In the first or second semiconductor integrated circuit device, arouting terminal crossing a boundary between the plurality of routingregions is preferably disposed within at least one of the plurality ofdevice regions.

[0030] In this manner, the global routings disposed in an adjacent pairof device regions can be connected to each other through the routingterminal. Therefore, a global routing can be formed to extend oversubstantially three or more device regions, resulting in improving thefreedom in the mask pattern layout design for the integrated circuit.

[0031] In the second semiconductor integrated circuit device, thedistance is preferably a half of the repetitive cycle.

[0032] In this manner, the global routings can be formed to extend bysubstantially the same distances in an adjacent pair of device regions.Therefore, the freedom in the mask pattern layout design for theintegrated circuit can be improved.

[0033] The first exposure method of this invention comprises the stepsof forming a lower layer pattern on a substrate to be exposed bysuccessively forming a corresponding pattern in each of a plurality offirst regions obtained by partitioning a principal plane of thesubstrate to be exposed through exposure using electromagnetic waves ora charged particle beam; and forming an upper layer pattern over thelower layer pattern on the substrate to be exposed by successivelyforming a corresponding pattern in each of a plurality of second regionsobtained by partitioning the principal plane of the substrate to beexposed through the exposure using electromagnetic waves or a chargedparticle beam, and each of the plurality of second regions crosses aboundary between the plurality of first regions.

[0034] In the first exposure method, the lower layer pattern is formedby successively forming a corresponding pattern in each of the pluralfirst regions partitioning the principal plane of the substrate to beexposed, and thereafter, the upper layer pattern is formed bysuccessively forming a corresponding pattern in each of the pluralsecond regions partitioning the principal plane of the substrate to beexposed. Therefore, when the dimension of each of the first and secondregions is set to be equivalent to one field of an optical stepper orone sub-field of EPL, an integrated circuit pattern larger than oneexposure region can be definitely formed on the substrate to be exposed.

[0035] Furthermore, in the first exposure method, each of the pluralsecond regions, where the patterns included in the upper layer patternare formed, crosses a boundary between the plural first regions, wherethe patterns included in the lower layer pattern are formed. Therefore,even when the upper layer pattern includes a pattern crossing a boundarybetween the first regions, the pattern can be formed without a stitchingerror. As a result, the integrated circuit pattern can be accuratelyformed.

[0036] In addition, in the first exposure method, the dimensions of thefirst and second regions are variable, and hence, the freedom in themask pattern layout design for the integrated circuit can be improved.

[0037] The second exposure method of this invention comprises the stepsof forming a lower layer pattern on a substrate to be exposed bysuccessively forming a corresponding pattern in each of a plurality offirst regions obtained by partitioning a principal plane of thesubstrate to be exposed through exposure using electromagnetic waves ora charged particle beam; and forming an upper layer pattern over thelower layer pattern on the substrate to be exposed by successivelyforming a corresponding pattern in each of a plurality of second regionsobtained by partitioning the principal plane of the substrate to beexposed through the exposure using electromagnetic waves or a chargedparticle beam, and the plurality of first regions are in one shape andtwo-dimensionally arranged in a repetitive cycle corresponding to theshape, and the plurality of second regions are in the shape andtwo-dimensionally arranged in the repetitive cycle corresponding to theshape to be shifted from the plurality of first regions by a distance.

[0038] In the second exposure method, the lower layer pattern is formedby successively forming a corresponding pattern in each of the pluralfirst regions partitioning the principal plane of the substrate to beexposed, and thereafter, the upper layer pattern is formed bysuccessively forming a corresponding pattern in each of the pluralsecond regions partitioning the principal plane of the substrate to beexposed. Therefore, when the dimension of each of the first and secondregions is set to be equivalent to one field of an optical stepper orone sub-field of EPL, an integrated circuit pattern larger than oneexposure region can be definitely formed on the substrate to be exposed.

[0039] Furthermore, in the second exposure method, the plural secondregions, where the patterns included in the upper layer pattern areformed, are arranged in the same repetitive cycle as that of the pluralfirst regions, where the patterns included in the lower layer patternare formed, to be shifted from the first regions by a predetermineddistance. Therefore, even when the upper layer pattern includes apattern crossing a boundary between the first regions, the pattern canbe formed without a stitching error. As a result, the integrated circuitpattern can be accurately formed.

[0040] In addition, in the second exposure method, the first regions andthe second regions are in a predetermined shape and two-dimensionallyarranged in the repetitive cycle corresponding to the shape. Therefore,each of the first and second regions can be easily dealt with as onefield of an optical stepper or one sub-field of EPL for the exposure.

BRIEF DESCRIPTION OF THE DRAWINGS

[0041]FIG. 1 is an enlarged plane view of a part of a semiconductorintegrated circuit device according to Embodiment 1 of the invention;

[0042]FIG. 2 is an enlarged plane view of a part of a semiconductorintegrated circuit device according to a modification of Embodiment 1;

[0043]FIG. 3 is an enlarged plane view of a part of a semiconductorintegrated circuit device according to Embodiment 2 of the invention;

[0044]FIG. 4 is an enlarged plane view of a part of a semiconductorintegrated circuit device according to a modification of Embodiment 2;

[0045]FIG. 5 is an enlarged plane view of a part of a conventionalsemiconductor integrated circuit device; and

[0046]FIGS. 6A, 6B and 6C are diagrams of stitching errors caused institched portions between patterns in the conventional semiconductorintegrated circuit device.

DETAILED DESCRIPTION OF THE INVENTION Embodiment 1

[0047] A semiconductor integrated circuit device according to Embodiment1 of the invention and an exposure method employed for fabricating thesame will now be described with reference to the accompanying drawing.The semiconductor integrated circuit device of Embodiment 1 includes aplurality of semiconductor devices formed on a substrate.

[0048]FIG. 1 is an enlarged plane view of a part of the semiconductorintegrated circuit device according to Embodiment 1.

[0049] As is shown in FIG. 1, the principal plane of a substrate 10 ispartitioned not only into a plurality of device regions 11 (surroundedwith broken lines), each in a predetermined shape such as a rectangularshape, two-dimensionally arranged in a repetitive cycle corresponding tothe shape but also into a plurality of routing regions 12 (surroundedwith thick solid lines), each in the same shape as the device region 11,two-dimensionally arranged in a repetitive cycle corresponding to theshape to be shifted from the device regions 11 by a predetermineddistance. Specifically, in Embodiment 1, the routing regions 12 areshifted from the device regions 11 by a distance corresponding to a halfof the repetitive cycle of the device regions 11 (which is the same asthe repetitive cycle of the routing regions 12).

[0050] Also, as is shown in FIG. 1, a functional block 13 correspondingto a basic element circuit such as a logic gate is disposed within eachdevice region 11. In other words, each functional block 13 is disposedso as not to cross a boundary between the device regions 11. Eachfunctional block 13 is constructed from a device group including atleast one semiconductor device of the plural semiconductor devices (notshown) formed on the substrate 10 and a local interconnect (not shown)for connecting semiconductor devices included in the device group.

[0051] Specifically, a first functional block 13 a, a second functionalblock 13 b, a third functional block 13 c and a fourth functional block13 d are respectively disposed within a first device region 11 a, asecond device region 11 b, a third device region 11 c and a fourthdevice region 11 d adjacent to one another. In the case where, forexample, a MOS (metal oxide semiconductor) transistor is used as thesemiconductor device, each functional block 13 contains at least one MOStransistor device including an active region consisting of n-type andp-type diffusion layers formed in the substrate 10 and a gate electrodeformed on the active region. At this point, each functional block 13 mayinclude a resistance device formed in the active region, a capacitancedevice formed from the active region and the gate electrode, a diodedevice including a pn junction or the like.

[0052] Furthermore, each local interconnect is formed on an interlayerinsulating film (not shown) on the substrate 10 bearing thesemiconductor devices and connects the semiconductor devices to eachother through a contact formed in the interlayer insulating film. In thecase where all the local interconnects of the entire semiconductorintegrated circuit device cannot be formed in one interconnect layer,however, an interlayer insulating film and an interconnect layer arerepeatedly and alternately stacked so that all the local interconnectscan be disposed. At this point, all the corresponding localinterconnects are disposed within each device region 11 in all theinterconnect layers for the local interconnects. Since a localinterconnect is used for connecting semiconductor devices providedwithin a very small region, freedom in circuit design is minimallydegraded even when all the local interconnects are disposed within eachdevice region 11.

[0053] Moreover, as is shown in FIG. 1, a global routing 14 forconnecting the functional blocks 13 disposed in an adjacent pair ofdevice regions 11 is disposed within each routing region 12. In otherwords, each global routing 14 is disposed so as not to cross a boundarybetween the routing regions 12. Specifically, each global routing 14 isformed on an interlayer insulating film (not shown) on the substrate 10bearing the functional blocks 13 (including the semiconductor devicesand the local interconnects) and connects the adjacent functional blocks13 to each other through a contact formed in the interlayer insulatingfilm. In the case where all the global routings 14 of the entiresemiconductor integrated circuit device cannot be disposed in oneinterconnect layer, however, an interlayer insulating film and aninterconnect layer are repeatedly and alternately stacked so that allthe global routings 14 can be disposed. At this point, each globalrouting 14 is disposed within the corresponding routing region 12 in allthe interconnect layers for the global routings.

[0054] Now, the exposure method according to Embodiment 1, specifically,the exposure method employed for fabricating the semiconductorintegrated circuit device of FIG. 1 will be described by exemplifyinguse of EPL.

[0055] First, the dimension of the device regions 11 and the routingregions 12 (all having the same dimension) is set to be equal to orsmaller than the maximum sub-field size of the EPL. In this manner, eachdevice region 11 and each routing region 12 can be dealt with as onesub-field for the exposure. The maximum sub-field size of currentlydeveloped EPL is approximately 250 μm□.

[0056] Next, in the respective plural device regions 11 partitioning theprincipal plane of the substrate 10, a pattern for forming the devicegroup of the corresponding functional block 13, for example, a gateelectrode pattern, is repeatedly formed through exposure using anelectron beam, thereby forming the gate electrode patterns of the entiresemiconductor integrated circuit device on the substrate 10. At thispoint, since each device group is provided within every device region11, the gate electrode pattern can be formed without a stitching error.

[0057] Then, in the respective plural device regions 11, a localinterconnect pattern of the corresponding functional block 13 isrepeatedly formed through the exposure using an electron beam, therebyforming the local interconnect patterns of the entire semiconductorintegrated circuit device on the substrate 10. At this point, since eachlocal interconnect is formed within every device region 11, the localinterconnect pattern can be formed without a stitching error.

[0058] Subsequently, in the respective plural routing regions 12partitioning the principal plane of the substrate 10, a pattern of thecorresponding global routing 14 is repeatedly formed through theexposure using an electron beam, thereby forming the patterns of theglobal routings 14 of the entire semiconductor integrated circuit deviceon the substrate 10. At this point, since each global routing 14 isformed within every routing region 12, the pattern of the global routing14 can be formed without a stitching error.

[0059] As described so far, in the semiconductor integrated circuitdevice of Embodiment 1, the functional block 13, namely, the devicegroup and the local interconnect, is formed within each device region 11partitioning the principal plane of the substrate 10. Therefore, whenthe dimension of each device region 11 is set to be equal to or smallerthan one sub-field of the EPL, the device group and the localinterconnect can be formed within every device region 11 without astitching error. As a result, variation or degradation of the devicecharacteristic derived from a stitching error can be prevented. Also,disconnection or the like of the local interconnect due toelectromigration or stress migration derived from a stitching error canbe avoided. Accordingly, the performance and the reliability of thesemiconductor integrated circuit device can be prevented from degrading.

[0060] Furthermore, in the semiconductor integrated circuit device ofEmbodiment 1, the global routing 14 for connecting the functional blocks13 disposed in an adjacent pair of device regions 11 is formed withineach of the routing regions 12 partitioning the principal plane of thesubstrate 10 and arranged in the same repetitive cycle as that of thedevice regions 11 to be shifted from the device regions 11 by apredetermined distance. Therefore, when the dimension of each routingregion 12 is set to be equal to or smaller than one sub-field of theEPL, the global routing 14 crossing a boundary between the deviceregions 11 can be formed without a stitching error. Accordingly, thefunctional blocks 13 can be connected to one another over a large areawithout degrading the reliability of the global routings 14. As aresult, the semiconductor integrated circuit device can attain a largechip area.

[0061] Moreover, in the semiconductor integrated circuit device ofEmbodiment 1, the device regions 11 and the routing regions 12 are inthe same predetermined shape and two-dimensionally arranged in therepetitive cycle corresponding to the shape. Accordingly, each of thedevice regions 11 and the routing regions 12 can be easily dealt with asone sub-field of the EPL for the exposure.

[0062] In the exposure method of Embodiment 1, the gate electrodepatterns or the local interconnect patterns of the entire semiconductorintegrated circuit device are formed by successively forming a gateelectrode pattern or a local interconnect pattern of the correspondingfunctional block 13 in each of the plural device regions 11 partitioningthe principal plane of the substrate 10. Thereafter, the patterns of theglobal routings 14 of the entire semiconductor integrated circuit deviceare formed by successively forming a pattern of the corresponding globalrouting 14 in each of the plural routing regions 12 partitioning theprincipal plane of the substrate 10. Accordingly, when the dimension ofeach of the device regions 11 and the routing regions 12 is set to beequivalent to one sub-field of the EPL, an integrated circuit patternlarger than one sub-field can be definitely formed on the substrate 10.

[0063] Furthermore, in the exposure method of Embodiment 1, the pluralrouting regions 12 where the patterns of the respective global routings14 are formed are arranged in the same repetitive cycle as that of theplural device regions 11 where the gate electrode patterns and the localinterconnect patterns are formed to be shifted by a predetermineddistance from the device regions 11. Accordingly, even when the patternof a global routing 14 crosses a boundary between the device regions 11,the pattern can be formed without a stitching error, resulting inaccurately forming the integrated circuit pattern.

[0064] Although the local interconnects are formed within the deviceregions 11 and the global routings 14 are formed within the routingregions 12 in the semiconductor integrated circuit device of Embodiment1, a local interconnect may cross a boundary between the device regions11 or a global routing 14 may cross a boundary between the routingregions 12 for the following reason: Interconnect layers of asemiconductor integrated circuit device have a multi-level structure andthe width used in the interconnect layer is larger in an upper layer.Therefore, in an interconnect layer using such a large width that astitching error is negligible, the reliability is never degraded evenwhen a local interconnect or a global routing 14 is not formed withinthe device region 11 or the routing region 12. Also, in the case where alocal interconnect crosses a boundary between the device regions 11 orin the case where a global routing 14 crosses a boundary between therouting regions 12, the freedom in mask pattern layout design for theintegrated circuit can be improved.

[0065] Moreover, in the semiconductor integrated circuit device ofEmbodiment 1, a boundary between the device regions 11 or between therouting regions 12 may have a predetermined width.

[0066] In addition, in the semiconductor integrated circuit device ofEmbodiment 1, the routing regions 12 are preferably arranged to beshifted from the device regions 11 by a distance corresponding to a halfof the repetitive cycle of the device regions 11 (which is the same asthe repetitive cycle of the routing regions 12). In this manner, theglobal routings 14 can extend by substantially the same distance in anadjacent pair of device regions 11, and hence, the freedom in the maskpattern layout design for the integrated circuit device can be improved.

[0067] In the semiconductor integrated circuit device of Embodiment 1,the functional blocks 13 (semiconductor device and local interconnect)are not necessarily disposed within every device region 11 and theglobal routing 14 is not necessarily disposed within every routingregion 12.

[0068] Although the EPL is employed in the exposure method of Embodiment1, an optical stepper may be employed instead. In this case, thedimension of each device region 11 and each routing region 12 is set tobe equal to or smaller than the maximum field size of the opticalstepper, so that each of the device regions 11 and the routing regions12 can be dealt with as one field for the exposure.

Modification of Embodiment 1

[0069] A semiconductor integrated circuit device according to amodification of Embodiment 1 and an exposure method employed forfabricating the same will now be described with reference to theaccompanying drawing. The semiconductor integrated circuit device of themodification of Embodiment 1 includes a plurality of semiconductordevices formed on a substrate.

[0070]FIG. 2 is an enlarged plane view of a part of the semiconductorintegrated circuit device according to the modification of Embodiment 1.

[0071] As is shown in FIG. 2, the principal plane of a substrate 10 ispartitioned not only into a plurality of device regions 11 (surroundedwith broken lines) but also into a plurality of routing regions 12(surrounded with thick solid lines) formed to cross boundaries betweenthe device regions 11. Specifically, the shapes of the device regions 11and the routing regions 12 are variable in this modification differentlyfrom Embodiment 1.

[0072] Also, as is shown in FIG. 2, a functional block 13 including adevice group and a local interconnect is disposed within each of thedevice regions 11 in the same manner as in Embodiment 1. Specifically, afirst functional block 13 a, a second functional block 13 b, a thirdfunctional block 13 c and a fourth functional block 13 d arerespectively disposed within a first device region 11 a, a second deviceregion 11 b, a third device region 11 c and a fourth device region 11 dadjacent to one another.

[0073] Moreover, as is shown in FIG. 2, a global routing 14 forconnecting the functional blocks 13 disposed in an adjacent pair ofdevice regions 11 is disposed within each of the routing regions 12 inthe same manner as in Embodiment 1.

[0074] Now, the exposure method according to the modification ofEmbodiment 1, specifically, the exposure method employed for fabricatingthe semiconductor integrated circuit device of FIG. 2 will be describedby exemplifying use of the EPL.

[0075] First, the dimension of each device region 11 and each routingregion 12 is set to be equal to or smaller than the maximum sub-fieldsize of the EPL. Thus, each of the device regions 11 and the routingregions 12 can be dealt with as one sub-field for the exposure.

[0076] Next, in the respective plural device regions 11 partitioning theprincipal plane of the substrate 10, a pattern of the device group ofthe corresponding functional block 13, for example, a gate electrodepattern is repeatedly formed through exposure using an electron beam,thereby forming the gate electrode patterns of the entire semiconductorintegrated circuit device on the substrate 10. At this point, since eachdevice group is formed within every device region 11, the gate electrodepattern can be formed without a stitching error.

[0077] Then, in the respective device regions 11, a local interconnectpattern of the corresponding functional block 13 is repeatedly formedthrough the exposure using an electron beam, thereby forming the localinterconnect patterns of the entire semiconductor integrated circuitdevice on the substrate 10. At this point, since each local interconnectis formed within every device region 11, the local interconnect patterncan be formed without a stitching error.

[0078] Subsequently, in the respective routing regions 12 partitioningthe principal plane of the substrate 10, a pattern of the correspondingglobal routing 14 is successively formed through the exposure using anelectron beam, thereby forming the patterns of the global routings 14 ofthe entire semiconductor integrated circuit device on the substrate 10.At this point, each global routing 14 is formed within every routingregion 12, the pattern of the global routing 14 can be formed without astitching error.

[0079] As described so far, in the semiconductor integrated circuitdevice according to the modification of Embodiment 1, the functionalblock 13, namely, the device group and the local interconnect, is formedwithin each of the device regions 11 partitioning the principal plane ofthe substrate 10. Therefore, when the dimension of each device region 11is set to be equal to or smaller than one sub-field of the EPL, a devicegroup and a local interconnect can be formed within every device region11 without a stitching error. As a result, the variation or degradationof the device characteristic derived from a stitching error can beprevented. Also, disconnection or the like of the local interconnectcaused by the electromigration or stress migration derived from astitching error can be avoided. Accordingly, the performance and thereliability of the semiconductor integrated circuit device can beprevented from degrading.

[0080] Furthermore, in the semiconductor integrated circuit deviceaccording to the modification of Embodiment 1, a global routing 14 forconnecting the functional blocks 13 disposed in an adjacent pair ofdevice regions 11 is disposed within each of the routing regions 12partitioning the principal plane of the substrate 10 and crossing theboundaries between the device regions 11. Therefore, when the dimensionof each routing region 12 is set to be equal to or smaller than onesub-field of the EPL, a global routing 14 crossing a boundary betweenthe device regions 11 can be formed without a stitching error.Accordingly, the functional blocks 13 can be connected to one anotherover a large area without degrading the reliability of the globalroutings 14. As a result, the semiconductor integrated circuit devicecan attain a large chip area.

[0081] Also in the semiconductor integrated circuit device of themodification of Embodiment 1, the dimensions of the device regions 11and the routing regions 12 are variable, and hence, the freedom in themask pattern layout design for the integrated circuit can be improved.

[0082] In the exposure method according to the modification ofEmbodiment 1, the gate electrode patterns and the local interconnectpatterns of the entire semiconductor integrated circuit device areformed by repeatedly forming a gate electrode pattern and a localinterconnect pattern of the corresponding functional block 13 in each ofthe plural device regions 11 partitioning the principal plane of thesubstrate 10. Thereafter, the patterns of the global routings 14 of theentire semiconductor integrated circuit device are formed by repeatedlyforming a pattern of the corresponding global routing 14 in each of theplural routing regions 12 partitioning the principal plane of thesubstrate 10. Therefore, when the dimension of each of the deviceregions 11 and the routing regions 12 is set to be equivalent to onesub-field of the EPL, an integrated circuit pattern larger than onesub-field can be definitely formed on the substrate 10.

[0083] Furthermore, in the exposure method of the modification ofEmbodiment 1, each of the plural routing regions 12 where the patternsof the global routings 14 are formed crosses a boundary between theplural device regions 11 where the gate electrode patterns and the localinterconnect patterns are formed. Therefore, even when the pattern of aglobal routing 14 crosses a boundary between the device regions 11, thepattern can be formed without a stitching error. As a result, theintegrated circuit pattern can be accurately formed.

[0084] Although the local interconnects are formed within the deviceregions 11 and the global routings 14 are formed within the routingregions 12 in the semiconductor integrated circuit device of themodification of Embodiment 1, a local interconnect may cross a boundarybetween the device regions 11 or a global routing 14 may cross aboundary between the routing regions 12 for the following reason:Interconnect layers of the semiconductor integrated circuit device havea multi-level structure and the width used in the interconnect layer islarger in an upper layer. Therefore, in an interconnect layer using sucha large width that a stitching error is negligible, the reliability isnever degraded even when a local interconnect or a global routing 14 isnot formed within the device region 11 or the routing region 12. Also,in the case where a local interconnect crosses a boundary between thedevice regions 11 or in the case where a global routing 14 crosses aboundary between the routing regions 12, the freedom in the mask patternlayout design for the integrated circuit can be improved.

[0085] Moreover, in the semiconductor integrated circuit device of themodification of Embodiment 1, a boundary between the device regions 11or between the routing regions 12 may have a predetermined width.

[0086] In the semiconductor integrated circuit device of themodification of Embodiment 1, the functional blocks 13 (semiconductordevice and local interconnect) are not necessarily disposed within everydevice region 11 and the global routing 14 is not necessarily disposedwithin every routing region 12.

[0087] Although the EPL is employed in the exposure method of themodification of Embodiment 1, an optical stepper may be employedinstead. In this case, each of the dimensions of the device regions 11and the routing regions 12 is set to be equal to or smaller than themaximum field size of the optical stepper, so that each of the deviceregions 11 and the routing regions 12 can be dealt with as one field forthe exposure.

Embodiment 2

[0088] A semiconductor integrated circuit device according to Embodiment2 of the invention will now be described with reference to theaccompanying drawing.

[0089]FIG. 3 is an enlarged plane view of a part of the semiconductorintegrated circuit device of Embodiment 2. The semiconductor integratedcircuit device of Embodiment 2 is obtained by improving one deviceregion 11 of the semiconductor integrated circuit device of Embodiment 1shown in FIG. 1, and in FIG. 3, like reference numerals are used torefer to like elements used in Embodiment 1 shown in FIG. 1 so as toomit the description.

[0090] Embodiment 2 is different from Embodiment 1 in routing terminals21 each crossing a boundary between routing regions 12 being disposedwithin one of a plurality of device regions 11 as is shown in FIG. 3.Specifically, one device region 11 is divided into four small regions byboundaries between adjacent four routing regions 12 (merely part ofwhich are shown in FIG. 3), and a routing terminal 21 having aconducting property is formed to cross the boundary between the routingregions 12 and extend over two small regions. The routing terminal 21 isformed, for example, in an interconnect layer for a local interconnect,whereas the routing terminal 21 is connected to neither a semiconductordevice nor a local interconnect.

[0091] In Embodiment 1, the functional block 13 is disposed within eachdevice region 11 (as is shown in FIG. 1). In contrast, in Embodiment 2,a first sub-block 22 a, a second sub-block 22 b, a third sub-block 22 cand a fourth sub-block 22 d for constructing a functional block 13 arerespectively disposed within the four small regions included in thedevice region 11 of FIG. 3. In this case, interconnects (not shown) forconnecting the sub-blocks 22 a through 22 d are formed in regionsbetween the routing terminals 21.

[0092] Also, as is shown in FIG. 3, the routing terminal 21 electricallyconnects a first global routing 14 a and a second global routing 14 bdisposed within an adjacent pair of routing regions 12 to each otherthrough a first contact 23 a and a second contact 23 b formed at theends thereof. In this manner, the global routing 14 can be extended soas to substantially cross a boundary between the routing regions 12.

[0093] Embodiment 2 can attain the following effects in addition to theeffects attained by Embodiment 1:

[0094] In Embodiment 1, each global routing 14 is disposed so as not tocross a boundary between the routing regions 12, and hence, the globalrouting 14 cannot be extended beyond a boundary between the routingregions 12, which restricts the freedom in the mask pattern layoutdesign for the integrated circuit. In contrast, in Embodiment 2, therouting terminal 21 crossing a boundary between the routing regions 12is disposed within the device region 11, and hence, the global routings14 disposed in an adjacent pair of routing regions 12 can be connectedto each other through the routing terminal 21. Accordingly, the globalrouting 14 can be formed to extend over substantially three or moredevice regions 11, resulting in improving the freedom in the maskpattern layout design for the integrated circuit.

[0095] Although the sub-blocks 22 a through 22 d are respectivelydisposed within the four small regions obtained by dividing the deviceregion 11 by the boundaries between the routing regions 12 in Embodiment2, the sub-block may be disposed so as to cover two or more of the foursmall regions.

Modification of Embodiment 2

[0096] A semiconductor integrated circuit device according to amodification of Embodiment 2 will now be described with reference to theaccompanying drawing.

[0097]FIG. 4 is an enlarged plane view of a part of the semiconductorintegrated circuit device of the modification of Embodiment 2. Thesemiconductor integrated circuit device of the modification ofEmbodiment 2 is obtained by improving one device region 11 of thesemiconductor integrated circuit device of the modification ofEmbodiment 1 shown in FIG. 2, and in FIG. 4, like reference numerals areused to refer to like elements used in the modification of Embodiment 1shown in FIG. 2 so as to omit the description.

[0098] The modification of Embodiment 2 is different from themodification of Embodiment 1 in routing terminals 21 each crossing aboundary between routing regions 12 being disposed within one of aplurality of device regions 11 as is shown in FIG. 4. Specifically, onedevice region 11 is divided into four small regions by boundariesbetween four adjacent routing regions (merely part of which are shown inFIG. 4), and the routing terminal 21 having a conducting property isformed so as to cross the boundary between the routing regions 12 andextend over two small regions. The routing terminal 21 is formed, forexample, in an interconnect layer for a local interconnect, whereas therouting terminal 21 is connected to neither a semiconductor device nor alocal interconnect.

[0099] In the modification of Embodiment 1, the functional block 13 isdisposed within each device region 11 (as is shown in FIG. 2). Incontrast, in the modification of Embodiment 2, a first sub-block 22 a, asecond sub-block 22 b, a third sub-block 22 c and a fourth sub-block 22d for constructing a functional block 13 are respectively disposedwithin the four small regions included in the device region 11 of FIG.4. In this case, interconnects (not shown) for connecting the sub-blocks22 a through 22 d are formed in regions between the routing terminals21.

[0100] Also, as is shown in FIG. 4, the routing terminal 21 electricallyconnects a first global routing 14 a and a second global routing 14 bdisposed within an adjacent pair of routing regions 12 to each otherthrough a first contact 23 a and a second contact 23 b formed at theends thereof. In this manner, the global routing 14 can be extended soas to substantially cross a boundary between the routing regions 12.

[0101] The modification of Embodiment 2 can attain the following effectsin addition to the effects attained by the modification of Embodiment 1:

[0102] In the modification of Embodiment 1, each global routing 14 isdisposed so as not to cross a boundary between the routing regions 12,and hence, the global routing 14 cannot be extended beyond a boundarybetween the routing regions 12, which restricts the freedom in the maskpattern layout design for the integrated circuit. In contrast, in themodification of Embodiment 2, the routing terminal 21 crossing aboundary between the routing regions 12 is disposed within the deviceregion 11, and hence, the global routings 14 disposed in an adjacentpair of routing regions 12 can be connected to each other through therouting terminal 21. Accordingly, the global routing 14 can be formed toextend over substantially three or more device regions 11, resulting inimproving the freedom in the mask pattern layout design for theintegrated circuit.

[0103] Although the sub-blocks 22 a through 22 d are respectivelydisposed within the four small regions obtained by dividing the deviceregion 11 by the boundaries between the routing regions 12 in themodification of Embodiment 2, the number of sub-blocks (plural) is notherein specified. In addition, the sub-block may be disposed so as tocover two or more of the plural small regions.

What is claimed is:
 1. A semiconductor integrated circuit devicecomprising a plurality of semiconductor devices formed on a substrate,wherein a principal plane of said substrate is partitioned into aplurality of device regions and into a plurality of routing regions eachcrossing a boundary between said plurality of device regions, a devicegroup including one or more semiconductor devices among said pluralityof semiconductor devices and a local interconnect for connecting saidsemiconductor devices included in said device group are disposed withinsaid plurality of device regions, and a global routing for connectingsaid device groups to each other is disposed within said plurality ofrouting regions.
 2. A semiconductor integrated circuit device comprisinga plurality of semiconductor devices formed on a substrate, wherein aprincipal plane of said substrate is partitioned into a plurality ofdevice regions having one shape and two-dimensionally arranged in arepetitive cycle corresponding to said shape and into a plurality ofrouting regions having said shape and two-dimensionally arranged in saidrepetitive cycle corresponding to said shape to be shifted from saidplurality of device regions by a distance, a device group including oneor more semiconductor devices among said plurality of semiconductordevices and a local interconnect for connecting said semiconductordevices included in said device group are disposed within said pluralityof device regions, and a global routing for connecting said devicegroups to each other is disposed within said plurality of routingregions.
 3. The semiconductor integrated circuit device of claim 1 or 2, wherein a routing terminal crossing a boundary between said pluralityof routing regions is disposed within at least one of said plurality ofdevice regions.
 4. The semiconductor integrated circuit device of claim2 , wherein said distance is a half of said repetitive cycle.
 5. Anexposure method comprising the steps of: forming a lower layer patternon a substrate to be exposed by successively forming a correspondingpattern in each of a plurality of first regions obtained by partitioninga principal plane of said substrate to be exposed through exposure usingelectromagnetic waves or a charged particle beam; and forming an upperlayer pattern over said lower layer pattern on said substrate to beexposed by successively forming a corresponding pattern in each of aplurality of second regions obtained by partitioning the principal planeof said substrate to be exposed through the exposure usingelectromagnetic waves or a charged particle beam, wherein each of saidplurality of second regions crosses a boundary between said plurality offirst regions.
 6. An exposure method comprising the steps of: forming alower layer pattern on a substrate to be exposed by successively forminga corresponding pattern in each of a plurality of first regions obtainedby partitioning a principal plane of said substrate to be exposedthrough exposure using electromagnetic waves or a charged particle beam;and forming an upper layer pattern over said lower layer pattern on saidsubstrate to be exposed by successively forming a corresponding patternin each of a plurality of second regions obtained by partitioning theprincipal plane of said substrate to be exposed through the exposureusing electromagnetic waves or a charged particle beam, wherein saidplurality of first regions are in one shape and two-dimensionallyarranged in a repetitive cycle corresponding to said shape, and saidplurality of second regions are in said shape and two-dimensionallyarranged in said repetitive cycle corresponding to said shape to beshifted from said plurality of first regions by a distance.